2SK4138 N-Channel Silicon MOSFET 2SK4138 Features

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2SK4138 N-Channel Silicon MOSFET 2SK4138 Features

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Ordering number ENA1008
2SK4138
N-Channel Silicon MOSFET
2SK4138
Features
General-Purpose Switching Device Applications
ON-resistance, input capacitance, ultrahigh-speed switching. Adoption high reliability process. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C (SANYO's ideal heat dissipation condition)*1 Conditions Ratings +150 Unit
SANYO's condition radiation from backside. method applying silicone grease backside device attaching device water-cooled radiator made aluminium. VDD=99V, L=1mH, IAV=14A L1mH, single pulse Marking K4138
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10908QB TC-00001019 A1008-1/4
2SK4138
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) Conditions ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A IS=14A, VGS=0V Ratings ±100 1000 38.4 22.1 0.95 0.52 Unit
Package Dimensions
unit (typ) 7002-001
10.0
2.54
2.54
5.08 10.0
Gate Source Drain SANYO
Switching Time Test Circuit
ID=7A RL=28.6 VDD=200V
Avalanche Resistance Test Circuit
PW=10s D.C.0.5%
VOUT
2SK4138
2SK4138 RGS=50
A1008-2/4
2SK4138
Tc=25°C
VDS=20V
-25°C 25°C 75°C
Drain Current,
IT11720
VGS=5V Drain-to-Source Voltage,
Drain Current,
RDS(on)
Gate-to-Source Voltage,
IT11721
RDS(on)
ID=7A
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Tc=75°C 25°C -25°C
IT11722
Gate-to-Source Voltage,
Case Temperature,
IT11723
VGS=0V
Forward Transfer Admittance,
VDS=10V
Source Current,
0.01
Tc=7
-25°C
25°C
IT11725
Drain Current,
1000
IT11724 10000
Time
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
Switching Time, Time
VDD=200V VGS=10V
Ciss, Coss, Crss
Ciss
1000
(off)
Coss
Crss
td(on)
Drain Current,
IT11726
Drain-to-Source Voltage,
IT11727
A1008-3/4
2SK4138
VDS=200V ID=14A
IDP=56A
ID=14A
Gate-to-Source Voltage,
PW10s
Drain Current,
IT11728
Operation this area limited RDS(on).
Tc=25°C Single pulse
Total Gate Charge,
Avalanche Energy derating factor
Drain-to-Source Voltage,
71000 IT13136
Allowable Power Dissipation,
IT10478
Case Tamperature,
IT13137
Ambient Temperature,
Note usage Since 2SK4138 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information January, 2008. Specifications information herein subject change without notice.
A1008-4/4

2SK4138 N-Channel Silicon MOSFET 2SK4138 Features

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