2SJ683 P-Channel Silicon MOSFET 2SJ683 Features Ge

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2SJ683 P-Channel Silicon MOSFET 2SJ683 Features Ge

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Ordering number ENA1057
2SJ683
P-Channel Silicon MOSFET
2SJ683
Features
General-Purpose Switching Device Applications
ON-resistance. Load Applicaions. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C Conditions Ratings -260 +150 Unit
Note VDD=-30V, L=100H, IAV=-65A L100H, Single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS= ±16V, VDS=0V Ratings Unit
Marking J683
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30508QA TC-00001244 A1057-1/4
2SJ683
Continued from preceding page.
Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions VDS=-10V, ID=-1mA VDS=-10V, ID=-33A ID=-33A, VGS=-10V ID=-33A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-30V, VGS=-10V, ID=-65A VDS=-30V, VGS=-10V, ID=-65A VDS=-30V, VGS=-10V, ID=-65A IS=-65A, VGS=0V Ratings -1.2 10.5 15500 1000 -0.9 -1.5 10.5 -2.6 Unit
Package Dimensions
unit (typ) 7002-001
10.0
2.54
2.54
5.08 10.0
Gate Source Drain SANYO
Switching Time Test Circuit
Avalanche Resistance Test Circuit
-10V
VDD= -30V -33A RL=0.9 VOUT
PW=10s D.C.1%
2SJ683 -10V
2SJ683
A1057-2/4
2SJ683
-130 -120 -110 -100
Tc=25°C
-130
VDS= -10V
-120 -110 -100
Drain Current,
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
Drain Current,
VGS=
-0.5 -1.0 -1.5
-2.0
-2.5
-3.0
-3.5
-4.0
Drain-to-Source Voltage,
IT13297
RDS(on)
Gate-to-Source Voltage,
IT13298
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-33A Single pulse
Single pulse
Tc=75°C 25°C -25°C
-VGS
Gate-to-Source Voltage,
IT13299 -100 -1.0 -0.1 -0.01 -0.001
Case Temperature,
IT13300
VGS=0V Single puls
Forward Transfer Admittance,
VDS= -10V
-0.2 -0.4
-0.1
-1.0
Drain Current,
7-100 IT13301
-25°
-0.6 -0.8
Source Current,
-1.0
-1.2 IT13302
Time
td(off)
VDD= -30V VGS= -10V
Ciss, Coss, Crss
f=1MHz
Ciss
Diode Forward Voltage,
Switching Time, Time
Ciss, Coss, Crss
1000
10000
td(on)
-0.1 -1.0 -100 IT13303
1000
Coss Crss
IT13304
Drain Current,
Drain-to-Source Voltage,
A1057-3/4
2SJ683
VDS= -30V -65A
Gate-to-Source Voltage,
IDP= -260A
-65A
Drain Current,
IT13305
-100 -1.0
Operation this area limited RDS(on).
-0.1 -0.1
Tc=25°C Single pulse
-1.0
Total Gate Charge,
Avalanche Energy derating factor
Drain-to-Source Voltage,
-100 IT13306
Allowable Power Dissipation,
IT10478
Ambient Temperature,
IT13307
Ambient Temperature,
Note usage Since 2SJ683 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information March, 2008. Specifications information herein subject change without notice.
A1057-4/4

2SJ683 P-Channel Silicon MOSFET 2SJ683 Features Ge

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