2SD2721 2SD2721 Features Triple Diffused Planar Silicon

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2SD2721 2SD2721 Features Triple Diffused Planar Silicon

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Ordering number ENA0475
2SD2721
2SD2721
Features
Triple Diffused Planar Silicon Transistor
Driver Applications
Large current capacitance. Wide high durability against breakdown. Adoption MBIT process. Attachment workability good Mica-less package.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=160V, IE=0A VEB=4V, IC=0A VCE=5V, IC=1A VCE=5V, IC=5A VCE=5V, IC=1A VCB=10V, f=1MHz Ratings Unit
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408DA TC-00001236 A0475-1/4
2SD2721
Continued from preceding page.
Parameter Base-to-Emitterr Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg VCE=5V, IC=5A IC=5A, IB=0.5A IC=5mA, IE=0A IC=50mA, RBE= IE=5mA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. Conditions Ratings 0.56 Unit
Package Dimensions
unit (typ) 7504-001
Switching Time Test Circuit
OUTPUT
PW=20s D.C.1%
16.0
INPUT
470F VCC=50V
22.0
21.0
100F
20.4
VBE=
IC=10IB1= -10IB2=5A
5.45
Base Collector Emitter SANYO TO-3PMLH
5.45
500mA 400mA
Collector Current,
VCE=5V
Collector Current,
300mA
200mA
20°C
25°C
100mA 80mA 60mA 40mA
20mA
IB=0mA
IT13291
Collector-to-Emitter Voltage,
IT13290
Base-to-Emitter Voltage,
-40°C
A0475-2/4
2SD2721
VCE=5V
VCE(sat)
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Ta=120°C
Current Gain,
25°C
-40°C
-40°C
25°C
0.01 0.01 0.01 IT13293
Collector Current,
IT13292
Collector Current,
ICP=20A IC=12A
Collector Current,
Collector Dissipation,
0.01
Tc=25°C Single pulse
IT13294
Collector-to-Emitter Voltage,
Ambient Temperature,
IT11332
Collector Dissipation,
Case Temperature,
IT11333
A0475-3/4
2SD2721
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information May, 2008. Specifications information herein subject change without notice.
A0475-4/4

2SD2721 2SD2721 Features Triple Diffused Planar Silicon

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