REJ03G1784-0200 Rev.2.00 2009 High speed switching Capable 4.5V g

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REJ03G1784-0200 Rev.2.00 2009 High speed switching Capable 4.5V g

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RJK0393DPA
REJ03G1784-0200 Rev.2.00 2009
High speed switching Capable 4.5V gate drive drive current High density mounting on-resistance RDS(on) typ. Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
Source Gate Drain
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C, 25°C Symbol VDSS VGSS ID(pulse)Note1 Note Note3 ch-C Tstg
Note
Ratings 25.6 3.13 +150
Unit °C/W
REJ03G1784-0200 Rev.2.00 2009 Page
RJK0393DPA
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 3270 13.2 0.83 23.5 ±0.1 1.08 Unit Test Conditions Note4 Note4 Note4
Note4 diF/
REJ03G1784-0200 Rev.2.00 2009 Page
RJK0393DPA
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited RDS(on) shot Pulse
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
25°C 75°C -25°C
Pulse Test
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage
Gate Source Voltage Static Drain Source State Resistance Drain Current
Drain Source State Registance RDS(on)
Drain Source Saturation Voltage VDS(on) (mV)
Pulse Test
Pulse Test
1000
Gate Source Voltage
Drain Current
REJ03G1784-0200 Rev.2.00 2009 Page
RJK0393DPA
Static Drain Source State Resistance Temperature
Drain Source State Registance RDS(on)
Pulse Test
Typical Capacitance Drain Source Voltage
10000
Ciss
Capacitance (pF)
3000 1000
Coss
Crss
Case Temperature (°C)
Drain Source Voltage
Dynamic Input Characteristics
Drain Source Voltage
Reverse Drain Current Source Drain Voltage
Gate Source Voltage
Reverse Drain Current
Pulse Test
Gate Charge (nc)
Source Drain Voltage
Maximum Avalanche Energy Channel Temperature Derating
Repetitive Avalanche Energy (mJ)
duty 0.1%
Channel Temperature (°C)
REJ03G1784-0200 Rev.2.00 2009 Page
RJK0393DPA
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
c(t) 3.13°C/W, 25°C
0.05 0.02
0.01
Pulse Width
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS
V(BR)DSS
Monitor
Monitor
Switching Time Test Circuit
Monitor D.U.T. Vout Vout Monitor
Switching Time Waveform
td(on)
td(off)
REJ03G1784-0200 Rev.2.00 2009 Page
RJK0393DPA
Package Dimensions
Package Name WPAK JEITA Package Code RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit:
0.15
4.21Typ 1.27Typ
0.8Max
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.15
+0.1 -0.3
+0.1 -0.2
0.06
0.05Max 0Min Stand-off
(Ni/Pd/Au plating) Notice:The reverse pattern die-pad support lead described above exists.
Ordering Information
Part RJK0393DPA-00-J53 Quantity 3000 Taping Shipping Container
REJ03G1784-0200 Rev.2.00 2009 Page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 3518-3399 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
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2009. Renesas Technology Corp., rights reserved. Printed Japan.
Colophon .7.2

REJ03G1784-0200 Rev.2.00 2009 High speed switching Capable 4.5V g

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