REJ03G1330-0500 Rev.5.00 2006 Capable -4.5 gate drive drive curre

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REJ03G1330-0500 Rev.5.00 2006 Capable -4.5 gate drive drive curre

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HAT1127H
REJ03G1330-0500 Rev.5.00 2006
Capable -4.5 gate drive drive current High density mounting Ultra on-resistance RDS(on) typ.
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
Source Gate Drain
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel Case Thermal Impedance Channel temperature Storage temperature Notes: duty cycle 25°C Symbol VDSS VGSS ID(pulse)Note1 Note2 ch-c Note2 Tstg Ratings -20/+10 -160 4.17 +150 Unit °C/W
Rev.5.00 2006 page
HAT1127H
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) -1.0 5600 1180 -0.88 ±0.1 -2.5 -1.15 Unit Test Conditions -20/+10 Note3 -4.5 Note3 Note3 Note3 diF/
Rev.5.00 2006 page
HAT1127H
Main Characteristics
Power Temperature Derating
-500 -100
Maximum Safe Operation Area
Drain Current
Channel Dissipation
Operation this area
limited RDS(on)
-0.1
25°C shot Pulse
-0.01 -0.1 -0.3
-100
Case Temperature
(°C)
Drain Source Voltage
Typical Output Characteristics
-4.5 -2.9 -3.0
Typical Transfer Characteristics
Pulse Test
-2.8 -2.7
Drain Current
-2.6
Drain Current
75°C
-2.5
-2.4
Pulse Test
25°C -25°C
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
-0.20 Pulse Test -0.16
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Pulse Test
Drain Source Voltage VDS(on)
-0.12
-0.1 -0.2 -0.5 -4.5
-0.08
-0.04
-100
Gate Source Voltage
Drain Current
Rev.5.00 2006 page
HAT1127H
Static Drain Source State Resistance Temperature
Pulse Test
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
-25°C 75°C Pulse Test -100 25°C
-4.5
-0.1 -0.3
Case Temperature
(°C)
Drain Current
Body-Drain Diode Reverse Recovery Time
Typical Capacitance Drain Source Voltage
30000 10000
Reverse Recovery Time (ns)
1000
Capacitance (pF)
Ciss 3000 1000 Coss Crss
di/dt -100 A/µs 25°C -100
-0.1 -0.3
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Drain Source Voltage
Switching Time (ns)
Gate Source Voltage
td(off) td(on) duty
-0.1 -0.2 -0.5
Gate Charge (nc)
Drain Current
Rev.5.00 2006 page
HAT1127H
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0
Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
f(t) 4.17°C/W, 25°C
0.05
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit
Monitor D.U.T. Vout Monitor
Waveform
Vout td(on)
td(off)
Rev.5.00 2006 page
HAT1127H
Package Dimensions
Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g
Unit:
0.25 -0.03
+0.05
3.95
-0.3
+0.1
+0.03 0.07 -0.04
0.75 1.27 0.10 0.40 0.06
0.25
-0.20
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part Name HAT1127H-EL-E Quantity 2500 Taping Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.5.00 2006 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
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2006. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G1330-0500 Rev.5.00 2006 Capable -4.5 gate drive drive curre

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