REJ03G1232-0500 Rev.5.00 2006 on-resistance RDS(on) typ. -4.5 dri
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HAT1095C
REJ03G1232-0500 Rev.5.00 2006
on-resistance RDS(on) typ. -4.5 drive current. gate drive devices. High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband
Source Drain Drain Drain Drain Gate
Absolute Maximum Ratings
25°C)
Item Symbol Ratings Drain Source voltage VDSS Gate Source voltage VGSS Drain current Drain peak current (pulse)Note1 Body Drain diode reverse drain current Channel dissipation PchNote Channel temperature Storage temperature Tstg +150 Notes: duty cycle When using glass epoxy board. (FR4 1.6mm), 25°C Unit
Rev.5.00 2006 page
HAT1095C
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Gate Source breakdown voltage Gate Source leakage current Drain Source leakage current Gate Source cutoff voltage Drain Source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) -0.3 -0.8 -1.2 -1.1 Unit Test Conditions ±100 ±6.4V, Note3 -4.5 Note3 -2.5 Note3 -1.8 Note3 Note3 -4.5 -4.5
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate Source charge Gate Drain charge Turn delay time Rise time Turn delay time Fall time Body Drain diode forward voltage Notes: Pulse test
|yfs| Ciss Coss Crss td(on) td(off)
Rev.5.00 2006 page
HAT1095C
Main Characteristics
Power Temperature Derating
-100 Test Condition When using glass epoxy board (FR4
Maximum Safe Operation Area
When using board. 25°C,1shot pulse
Drain Current
Channel Dissipation
-0.3 -0.1 -0.03
Operation this area limited RDS(on)
-0.01 -0.03 -0.1 -0.3
-100
Ambient Temperature
(°C)
Drain Source Voltage
Typical Output Characteristics
-4.5 -3.5 Pulse Test
Typical Transfer Characteristics
Pulse Test 25°C
Drain Current
Drain Current
75°C -25°C
-2.5
-2.0 -1.8 -1.6 -1.4
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Voltage VDS(on) (mV)
-500 Pulse Test -400
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
10000 Pulse Test
1000
-300
-200
-0.5
-4.5
-100
-0.1
Gate Source Voltage
Drain Current
Rev.5.00 2006 page
HAT1095C
Static Drain Source State Resistance Temperature Forward Transfer Admittance Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Pulse Test
-0.5 -2.5 -0.5
0.03 0.01 0.01 0.03 -25°C 25°C 75°C
-1.8
-4.5 -0.5
Pulse Test
Case Temperature
(°C)
Drain Current
Dynamic Input Characteristics
Typical Capacitance Drain Source Voltage
Drain Source Voltage
Gate Source Voltage
10000
Capacitance (pF)
Ciss
Coss Crss
Gate Charge (nc)
Drain Source Voltage
Reverse Drain Current Source Drain Voltage
1000 Pulse Test
Switching Characteristics
td(off) td(on)
Reverse Drain Current
Switching Time (ns)
-0.4
-0.8
-1.2
-1.6
-2.0
0.01 0.02
Source Drain Voltage
Drain Current
Rev.5.00 2006 page
HAT1095C
Switching Time Test Circuit
Monitor D.U.T. -4.5 Vout td(on) Vout Monitor
Waveform
td(off)
Rev.5.00 2006 page
HAT1095C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 CMFPAK-6V MASS[Typ.] 0.0065g
Reference Symbol
Dimension Millimeters
Pattern terminal position areas
Section
0.15 2.05 0.15
0.22 0.13 0.11 0.65
0.01 0.79 0.15 2.15 0.45 0.05 0.05 0.35
1.65
Ordering Information
Part Name HAT1095C-EL-E Quantity 3000 Taping Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.5.00 2006 page
Sales Strategic Planning Div.
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