REJ03G1667-0100 Rev.1.00 2008 on-resistance leakage current High

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REJ03G1667-0100 Rev.1.00 2008 on-resistance leakage current High

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H5N2522LS
REJ03G1667-0100 Rev.1.00 2008
on-resistance leakage current High speed switching Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)
Gate Drain Source Drain
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 1.67 +150 Unit °C/W
REJ03G1667-0100 Rev.1.00 2008 Page
H5N2522LS
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) 0.14 1300 24.5 0.99 ±0.1 0.18 1.54 Unit Test conditions Note4 12.5 Note4 diF/dt A/µs
REJ03G1667-0100 Rev.1.00 2008 Page
H5N2522LS
Package Dimensions
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(1.5)
2.49
1.37 2.54
0.86
2.54
Ordering Information
Part H5N2522LSTL-E Quantity 1000 Taping Shipping Container
REJ03G1667-0100 Rev.1.00 2008 Page
0.15
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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REJ03G1667-0100 Rev.1.00 2008 on-resistance leakage current High

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