REJ03G1619-0101 Rev.1.01 2008 on-resistance leakage current High

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REJ03G1619-0101 Rev.1.01 2008 on-resistance leakage current High

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H5N2521FN
REJ03G1619-0101 Rev.1.01 2008
on-resistance leakage current High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
Gate Drain Source
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 6.25 +150 Unit °C/W
REJ03G1619-0101 Rev.1.01 2008 Page
H5N2521FN
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off)
0.95 2.98 0.89
±0.1 1.35
Unit
Test conditions diF/dt A/µs
REJ03G1619-0101 Rev.1.01 2008 Page
H5N2521FN
Main Characteristics
Power Temperature Derating
25°C
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation 25°C) (1shot)
0.01 Operation this 0.001
area limited RDS(on)
1000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage
Drain Source State Resistance RDS(on) Drain Source Saturation Voltage VDS(on)
Pulse Test
Gate Source Voltage Static Drain Source State Resistance Drain Current
0.01
Pulse Test
Gate Source Voltage
Drain Current
REJ03G1619-0101 Rev.1.01 2008 Page
H5N2521FN
Static Drain Source State Resistance Temperature
Static Drain Source State Resistance RDS(on)
Body-Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time (ns)
25°C
Pulse Test
Case Temperature
(°C)
Reverse Drain Current
Typical Capacitance Drain Source Voltage
Dynamic Input Characteristics
Drain Source Voltage
1000
Capacitance (pF)
Ciss
Coss Crss
Drain Source Voltage
Gate Charge (nC)
Switching Characteristics
1000
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Switching Time (µs)
duty td(off)
Pulse Test
td(on)
Drain Current
Source Drain Voltage
REJ03G1619-0101 Rev.1.01 2008 Page
Gate Source Voltage
H5N2521FN
Gate Source Cutoff Voltage Case Temperature
Gate Source Cutoff Voltage VGS(off)
Case Temperature (°C)
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
25°C
0.05
6.25°C/W, 25°C
0.01
1shot pulse
0.01
Pulse Width Switching Time Test Circuit
Monitor D.U.T. 125V td(off) Vout Vout Monitor
Waveform
td(on)
REJ03G1619-0101 Rev.1.01 2008 Page
H5N2521FN
Package Dimensions
Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g
Unit:
0.75 0.15 0.75 0.15
2.54 0.25
2.54 0.25
Ordering Information
Part H5N2521FN-E-T2 Quantity Plastic magazine Shipping Container
REJ03G1619-0101 Rev.1.01 2008 Page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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REJ03G1619-0101 Rev.1.01 2008 on-resistance leakage current High

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