REJ03G1339-0600 Rev.6.00 2006 on-resistance leakage current High

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REJ03G1339-0600 Rev.6.00 2006 on-resistance leakage current High

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H5N2001LD, H5N2001LS, H5N2001LM
REJ03G1339-0600 Rev.6.00 2006
on-resistance leakage current High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK
Gate Drain Source Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1)
H5N2001LD
H5N2001LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2)
H5N2001LM
Rev.6.00 2006 page
H5N2001LD, H5N2001LS, H5N2001LM
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Body drain diode reverse drain peak current Avalanche current Channel dissipation Channel case Thermal Impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C 150°C Symbol VDSS VGSS (pulse) Note (pulse) Note Note Note ch-c Tstg Ratings 1.67 +150 Unit °C/W
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body drain diode forward voltage Body drain diode reverse recovery time Body drain diode reverse recovery charge Note: Pulse test Symbol (BR) IGSS IDSS (off) (on) |yfs| Ciss Coss Crss (on) (off) 0.100 1350 ±0.1 0.125 Unit Test Conditions Note Note Note4 diF/dt A/µs
Rev.6.00 2006 page
H5N2001LD, H5N2001LS, H5N2001LM
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited (on) 0.03 25°C
Operation 25°C 1000
0.01
Case Temperature
(°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Drain Source Saturation Voltage VDS(on)
Pulse Test
Pulse Test
0.05
0.02 0.01 1000
Gate Source Voltage
Drain Current
Rev.6.00 2006 page
H5N2001LD, H5N2001LS, H5N2001LM
Static Drain Source State Resistance Temperature
Forward Transfer Admittance |yfs|
Pulse Test -25°C 75°C 25°C
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance Drain Current
Pulse Test
Case Temperature
(°C)
Drain Current Typical Capacitance Drain Source Voltage
100000 30000
Body Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
1000 25°C
Capacitance (pF)
10000 3000 1000 Crss Coss Ciss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
10000
Switching Characteristics
duty 3000 1000 td(on) td(off)
Drain Source Voltage
Gate Charge
(nc)
Gate Source Voltage
Switching Time (ns)
Drain Current
Rev.6.00 2006 page
H5N2001LD, H5N2001LS, H5N2001LM
Reverse Drain Current Souece Drain Voltage
Gate Source Cutoff Voltage Case Temperature
Gate Source Cutoff Voltage (off)
Reverse Drain Current
Pulse Test
Source Drain Voltage
Case Temperature
(°C)
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
0.03 0.01
1.67°C/W, 25°C
Pulse Width
Switching Time Test Circuit
Switching Time Waveform
Monitor D.U.T.
Vout Monitor Vout
td(on)
td(off)
Rev.6.00 2006 page
H5N2001LD, H5N2001LS, H5N2001LM
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) LDPAK(L)V MASS[Typ.] 1.40g
Unit:
(1.4)
4.44 10.2 0.15
11.3 10.0
1.37
0.76 2.54 2.54
11.0
0.86
2.49
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(1.5)
2.49
1.37 2.54
0.86
2.54
Rev.6.00 2006 page
0.15
H5N2001LD, H5N2001LS, H5N2001LM
Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) LDPAK(S)-(2)V MASS[Typ.] 1.35g
Unit:
4.44 10.2
(1.4)
2.49
10.0
(1.5)
(2.3)
1.37 2.54
0.86
2.54
Ordering Information
Part Name H5N2001LD-E H5N2001LSTL-E H5N2001LMTL-E Quantity 1000 1000 Shipping Container (Conductive Sack) Taping Taping
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.6.00 2006 page
0.15
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Unit 906, Block Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
2006. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G1339-0600 Rev.6.00 2006 on-resistance leakage current High

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