forward current Guard ring protected diode capacitance. APPLICATI

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forward current Guard ring protected diode capacitance. APPLICATI

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LBAS40XLT1G
forward current Guard ring protected diode capacitance.
APPLICATIONS
Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with integrated guard ring stress protection. declare that material product compliance with RoHS requirements.
Anode
SOT-
Cathode BAS40 single diode.
Cathode/Anode
ORDERING INFORMATION
Device Marking Shipping
Anode
Cathode BAS40-04 double diode.
LBAS40LT1G LBAS40LT3G LBAS40-04LT1G LBAS40-04LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40-06LT1G LBAS40-06LT3G
3000 Tape Reel 10000 Tape Reel 3000 Tape Reel 10000 Tape Reel 3000 Tape Reel 10000 Tape Reel 3000 Tape Reel 10000 Tape Reel
Cathode
Anode BAS40-05 double diode.
Anode
Anode Cathode Cathode
BAS40-06 double diode.
LBAS40XLT1G
MAXIMUM RATINGS 25°C)
Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol IFSM IFSM Tstg Tamb Min. Max. +150 +150 Unit Conditions
tp<1s;<0.5 tp<10ms
DEVICE MARKING
LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2
ELECTRICAL CHARACTERISTICS(TA 25°C)
Parameter Forward voltage(Fig.1) Symbol Max. Unit Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V f=1MHz;VR=0
Reverse current(Fig.2 ;note1) Diode capacitance(Fig.4) Note:
Pulse test:tp=300µs;=0.02.
THERMAL CHARACTERISTICS PARAMETER
Thermal resistance from junction ambient Note
SYMBOL
VALUE
UNIT
CONDITIONS note1
Refer SOT23 SOT143B standard mounting conditions.
LBAS40XLT1G
Electrical characteristic curves(TA 25°C)
FORWARD VOLTAGE: (µA) FORWARD VOLTAGE: (mA)
Tamb=85OC Tamb=150OC
Tamb=150
Tamb=25OC
Tamb=-40OC
Tamb=85OC
10-1
Tamb=25OC
10-2
10-2
Fig.1 Forward current function forward voltage; typical values.
FORWARD VOLTAGE:
Fig.2 Reverse current function reverse voltage; typical values.
FORWARD VOLTAGE:
FORWARD VOLTAGE: rdiff()
FORWARD VOLTAGE: Cd(pF)
f=10KHz
FORWARD VOLTAGE: (mA)
FORWARD VOLTAGE:
f=1MHz Tamb=25
Fig.3 Differential forward resistance function forward current;typical values.
Fig.4 Diode capacitance function reverse voltage;typical values.
LBAS40XLT1G
SOT-23
NOTES:
0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 DIMENSIONING TOLERANCING ANSI Y14.5M,1982 CONTROLLING DIMENSION: INCH. INCHES 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
0.037 0.95
0.037 0.95
0.079 0.035 0.031
inches

forward current Guard ring protected diode capacitance. APPLICATI

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