LTC4444 high frequency high voltage gate driver that drives N-channel

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LTC4444 high frequency high voltage gate driver that drives N-channel

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LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES
LTC4444 high frequency high voltage gate driver that drives N-channel MOSFETs synchronous DC/DC converter with supply voltages 100V. powerful driver capability reduces switching losses MOSFETs with high gate capacitance. LTC4444's pull-up gate driver peak output current 2.5A pull-down output impedance 1.2. pull-up bottom gate driver peak output current pull-down output impedance 0.55. LTC4444 configured supply-independent inputs. high side input logic signal internally level-shifted bootstrapped supply, which function 114V above ground. LTC4444 contains undervoltage lockout circuits that disable external MOSFETs when activated. LTC4444 also contains adaptive shoot-through protection prevent both MOSFETs from conducting simultaneously. LTC4444 available thermally enhanced 8-lead MSOP package.
Lare registered trademarks Linear Technology Corporation. other trademarks property their respective owners. Protected U.S. Patents, including 6677210.
Bootstrap Supply Voltage 114V Wide Voltage: 7.2V 13.5V Adaptive Shoot-Through Protection 2.5A Peak Pull-Up Current Peak Pull-Up Current Driver Pull-Down 0.55 Driver Pull-Down Fall Time Driving Load Rise Time Driving Load Fall Time Driving Load Rise Time Driving Load Drives Both High Side N-Channel MOSFETs Undervoltage Lockout Thermally Enhanced 8-Pin MSOP Package
APPLICATIONS
Distributed Power Architectures Automotive Power Supplies High Density Power Modules Telecommunications
TYPICAL APPLICATION
High Input Voltage Buck Converter
7.2V 13.5V BOOST PWM1 (FROM CONTROLLER PWM2 (FROM CONTROLLER TINP BINP
4444 TA01a
LTC4444 Driving 1000pF Capacitive Load
BINP 5V/DIV 10V/DIV TINP 5V/DIV TG-TS 10V/DIV 20ns/DIV
4444 TA01b
100V (ABS MAX) LTC4444 VOUT
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LTC4444 ABSOLUTE MAXIMUM RATINGS
(Note
CONFIGURATION
VIEW TINP BINP BOOST
Supply Voltage VCC. -0.3V BOOST -0.3V TINP Voltage BINP Voltage BOOST Voltage -0.3V 114V Voltage. 100V Operating Temperature Range (Note -40°C 85°C Junction Temperature (Note 125°C Storage Temperature Range. -65°C 150°C Lead Temperature (Soldering, sec) 300°C
MS8E PACKAGE 8-LEAD PLASTIC MSOP TJMAX 125°C, 40°C/W, 10°C/W (NOTE EXPOSED (PIN GND, MUST SOLDERED
ORDER INFORMATION
LEAD FREE FINISH LTC4444EMS8E#PBF LTC4444IMS8E#PBF TAPE REEL LTC4444EMS8E#TRPBF LTC4444IMS8E#TRPBF PART MARKING* LTDBF LTDBF PACKAGE DESCRIPTION 8-Lead Plastic MSOP 8-Lead Plastic MSOP TEMPERATURE RANGE -40°C 85°C -40°C 85°C
Consult Marketing parts specified with wider operating temperature ranges. *The temperature grade identified label shipping container. Consult Marketing information non-standard lead based finish parts. more information lead free part marking, http://www.linear.com/leadfree/ more information tape reel specifications,
denotes specifications which apply over full operating temperature range, otherwise specifications 25°C. VBOOST 12V, unless otherwise noted.
SYMBOL IVCC UVLO PARAMETER Operating Voltage Supply Current Undervoltage Lockout Threshold TINP BINP Rising Falling Hysteresis TINP BINP BINP Ramping High BINP Ramping TINP Ramping High TINP Ramping
ELECTRICAL CHARACTERISTICS
Gate Driver Supply,
CONDITIONS
13.5
UNITS
6.00 5.60 6.60 6.15 2.25 1.85 2.25 1.85 2.75 2.75 ±0.01
7.20 6.70
Bootstrapped Supply (BOOST IBOOST VIH(BG) VIL(BG) VIH(TG) VIL(TG) ITINP(BINP) Supply Current Turn-On Input Threshold Turn-Off Input Threshold Turn-On Input Threshold Turn-Off Input Threshold Input Bias Current 3.25 2.75 3.25 2.75 Input Signal (TINP, BINP)
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LTC4444
denotes specifications which apply over full operating temperature range, otherwise specifications 25°C. VBOOST 12V, unless otherwise noted.
SYMBOL VOH(TG) VOL(TG) IPU(TG) RDS(TG) VOH(BG) VOL(BG) IPU(BG) RDS(BG) tPLH(TG) tPHL(TG) tPLH(BG) tPHL(BG) tr(TG) tf(TG) tr(BG) tf(BG) PARAMETER High Output Voltage Output Voltage Peak Pull-Up Current Pull-Down Resistance High Output Voltage Output Voltage Peak Pull-Up Current Pull-Down Resistance Low-High Propagation Delay High-Low Propagation Delay Low-High Propagation Delay High-Low Propagation Delay Output Rise Time Output Fall Time Output Rise Time Output Fall Time 90%, 90%, 10nF 90%, 90%, 10nF 90%, 90%, 10nF 90%, 90%, 10nF -10mA, VOH(BG) 100mA
ELECTRICAL CHARACTERISTICS
High Side Gate Driver Output (TG)
CONDITIONS -10mA, VOH(TG) VBOOST 100mA, VOL(TG) -VTS
UNITS
Side Gate Driver Output (BG)
0.55
Switching Time (BINP (TINP) Tied Ground While TINP (BINP) Switching. Refer Timing Diagram)
Note Stresses beyond those listed under Absolute Maximum Ratings cause permanent damage device. Exposure Absolute Maximum Rating condition extended periods affect device reliability lifetime. Note LTC4444E guaranteed meet specifications from 85°C. Specifications over -40°C 85°C operating temperature range assured design, characterization correlation with statistical process controls. LTC4444I guaranteed over full -40°C 85°C operating temperature range.
Note calculated from ambient temperature power dissipation according following formula: JA°C/W) Note Failure solder exposed back side MS8E package board will result thermal resistance much higher than 40°C/W.
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LTC4444 TYPICAL PERFORMANCE CHARACTERISTICS
Supply Quiescent Current Voltage
QUIESCENT CURRENT SUPPLY VOLTAGE
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BOOST-TS Supply Quiescent Current Voltage
QUIESCENT CURRENT TINP BINP BOOST SUPPLY VOLTAGE
4444
Supply Current Temperature
SUPPLY CURRENT TINP BINP TINP(BINP) TEMPERATURE (°C)
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25°C BOOST
TINP BINP
25°C
TINP 12V, BINP
BOOST
TINP(BINP)
TINP BINP
Boost Supply Current Temperature
BOOST SUPPLY CURRENT TINP BINP TEMPERATURE (°C)
4444
Output Voltage (VOL) Supply Voltage
VOL(TG) OUTPUT VOLTAGE OUTPUT VOLTAGE (mV) VOL(BG) SUPPLY VOLTAGE 25°C ITG(BG) 100mA BOOST
Output High Voltage (VOH) Supply Voltage
25°C BOOST
BOOST
TINP BINP
TINP BINP
-1mA -10mA -100mA
SUPPLY VOLTAGE
444343
4444
Input Thresholds (TINP, BINP) Supply Voltage
INPUT THRESHOLD SUPPLY VOLTAGE VIL(TG,BG INPUT THRESHOLD 25°C BOOST VIH(TG,BG)
Input Thresholds (TINP, BINP) Temperature
INPUT THRESHOLD HYSTERESIS (mV) BOOST TEMPERATURE (°C)
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Input Thresholds (TINP, BINP) Hysteresis Voltage
25°C BOOST
VIH(TG,BG)
VIL(TG,BG)
SUPPLY VOLTAGE
4444
4444
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LTC4444 TYPICAL PERFORMANCE CHARACTERISTICS
Input Thresholds (TINP, BINP) Hysteresis Temperature
INPUT THRESHOLD HYSTERESIS (mV) BOOST SUPLLY VOLTAGE TEMPERATURE (°C)
4444
Undervoltage Lockout Thresholds Temperature
BOOST RISING THRESHOLD RISE/FALL TIME (ns)
Rise Fall Time Supply Voltage
25°C BOOST 3.3nF
tr(TG)
tr(BG)
FALLING THRESHOLD
tf(TG)
tf(BG) SUPPLY VOLTAGE
TEMPERATURE (°C)
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Rise Fall Time Load Capacitance
RISE/FALL TIME (ns) tr(BG) tf(BG) LOAD CAPACITANCE (nF) tf(TG) 25°C BOOST PULL-UP CURRENT tr(TG)
Peak Driver (TG, Pull-Up Current Temperature
BOOST IPU(BG) OUTPUT DRIVER PULL-DOWN RESISTACNE
Output Driver Pull-Down Resistance Temperature
BOOST-TS BOOST-TS RDS(TG) BOOST-TS RDS(BG)
IPU(TG) TEMPERATURE (°C)
4444
TEMPERATURE (°C)
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Propagation Delay Supply Voltage
PROPAGATION DELAY (ns) SUPPLY VOLTAGE tPHL(BG) tPHL(TG) tPLH(BG) tPLH(TG) 25°C BOOST PROPAGATION DELAY (ns)
Propagation Delay Temperature
BOOST tPLH(TG) tPHL(TG)
tPLH(BG) tPHL(BG) TEMPERATURE (°C)
4444
4444
4444f
LTC4444 TYPICAL PERFORMANCE CHARACTERISTICS
Switching Supply Current Input Frequency
25°C BOOST SUPPLY CURRENT (mA) IBOOST SWITCHING) SWITCHING FREQUENCY (kHz) 1000
4444
Switching Supply Current Load Capacitance
IVCC SWITCHING 1MHz) IBOOST SWITCHING 500kHz)
IVCC SWITCHING)
SUPPLY CURRENT (mA)
IBOOST SWITCHING)
IVCC SWITCHING)
IBOOST SWITCHING IVCC 1MHz) SWITCHING 500kHz) IVCC IVCC SWITCHING SWITCHING 500kHz) 1MHz) IBOOST SWITCHING 1MHz 5OOkHz)
LOAD CAPACITANCE (nF)
""""
FUNCTIONS
TINP (Pin High Side Input Signal. Input referenced GND. This input controls high side driver output (TG). BINP (Pin Side Input Signal. This input controls side driver output (BG). (Pin Supply. This powers input buffers, logic side gate driver output directly high side gate driver output through external diode connected between this BOOST (Pin ceramic bypass capacitor should tied between this (Pin (Pin Side Gate Driver Output (Bottom Gate). This swings between GND. (Pin Connect. connection required. BOOST (Pin High Side Bootstrapped Supply. external capacitor should tied between this (Pin Normally, bootstrap diode connected between (Pin this pin. Voltage swing this from where forward voltage drop bootstrap diode. (Pin High Side Gate Driver Output (Top Gate). This swings between BOOST. (Pin High Side MOSFET Source Connection (Top Source). Exposed (Pin Ground. Must soldered ground optimal thermal performance.
4444f
LTC4444 BLOCK DIAGRAM
HIGH SIDE LEVEL SHIFTER VINT ANTISHOOT-THROUGH PROTECTION BINP
4444
BOOST UVLO
100V
7.2V 13.5V
TINP
SIDE LEVEL SHIFTER
TIMING DIAGRAM
INPUT RISE/FALL TIME 10ns TINP (BINP) BINP (TINP) (TG)
(BG) tPHL
tPLH
4444
OPERATION
Overview LTC4444 receives ground-referenced, voltage digital input signals drive N-channel power MOSFETs synchronous buck power supply configuration. gate side MOSFET driven either GND, depending state input. Similarly, gate high side MOSFET driven either BOOST supply bootstrapped switching node (TS). Input Stage LTC4444 employs CMOS compatible input thresholds that allow voltage digital signal drive standard power MOSFETs. LTC4444 contains internal voltage regulator that biases both input buffers high side side inputs, allowing input thresholds (VIH 2.75V, 2.3V) independent variations VCC. 450mV hysteresis between eliminates false triggering noise during switching transitions. However, care should taken keep both input pins (TINP BINP) from noise pickup, especially high frequency, high voltage applications. LTC4444 input buffers have high input impedance draw negligible input current, simplifying drive circuitry required inputs.
4444f
LTC4444 OPERATION
Output Stage simplified version LTC4444's output stage shown Figure pull-up devices outputs bipolar junction transistors Q2). outputs pulled within (~0.7V) their positive rails (VCC BOOST, respectively). Both have N-channel MOSFET pull-down devices which pull down their negative rails, large voltage swing output pins important driving external power MOSFETs, whose RDS(ON) inversely proportional gate overdrive voltage (VGS VTH). Rise/Fall Time LTC4444's rise fall times determined peak current capabilities predriver that drives uses nonoverlapping transition scheme minimize cross-conduction currents. fully turned before turned vice versa. Since power MOSFET generally accounts majority power loss converter, important quickly turn off, thereby minimizing transition time linear region. additional benefit strong pull-down driver outputs prevention crossconduction current. example, when turns side (synchronous) power MOSFET turns high side power MOSFET voltage will rise very rapidly. This high frequency positive voltage transient will couple through capacitance side power MOSFET pin. there insufficient pull-down pin, voltage rise above threshold voltage side power MOSFET, momentarily turning back With both high side side MOSFETs conducting, significant cross-conduction current will flow through MOSFETs from ground will cause substantial power loss. similar effect occurs capacitances high side MOSFET. powerful output driver LTC4444 reduces switching losses power MOSFET, which increase with transition time. LTC4444's high side driver
Figure Capacitance Seen During Switching
LTC4444 BOOST 100V
HIGH SIDE POWER MOSFET LOAD INDUCTOR
SIDE POWER MOSFET
capable driving load with rise fall times using bootstrapped supply voltage VBOOST-TS while side driver capable driving load with rise fall times using supply voltage 12V. Undervoltage Lockout (UVLO) LTC4444 contains undervoltage lockout detector that monitors supply. When falls below 6.15V, output pins pulled down respectively. This turns both external MOSFETs. When adequate supply voltage, normal operation will resume. Adaptive Shoot-Through Protection Internal adaptive shoot-through protection circuitry monitors voltages external MOSFETs ensure that they conduct simultaneously. This feature improves efficiency eliminating cross-conduction current from flowing from supply through both MOSFETs ground during switch transition. adaptive shootthrough protection circuitry also monitors level pin. stays high, will turned 150ns after turned off.
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LTC4444 APPLICATIONS INFORMATION
Power Dissipation ensure proper operation long-term reliability, LTC4444 must operate beyond maximum temperature rating. Package junction temperature calculated (JA) where: Junction temperature Ambient temperature Power dissipation Junction-to-ambient thermal resistance Power dissipation consists standby switching power losses: where: Quiescent power loss Internal switching loss input frequency, Loss turning external MOSFET with gate charge frequency LTC4444 consumes very little quiescent current. power loss VBOOST-TS only (350A)(12V) 4.2mW. particular switching frequency, internal power loss increases both currents required charge discharge internal node capacitances cross-conduction currents internal logic gates. quiescent current internal switching current with load shown Typical Performance Characteristics plot Switching Supply Current Input Frequency. gate charge losses primarily large currents required charge discharge capacitance external MOSFETs during switching. identical pure capacitive loads CLOAD switching frequency fIN, load losses would PCLOAD (CLOAD)(f)[(VBOOST-TS)2 (VCC)2] typical synchronous buck configuration, VBOOST-TS equal where forward voltage drop across diode between BOOST. this drop small relative VCC, load losses approximated PCLOAD 2(CLOAD)(fIN)(VCC)2 Unlike pure capacitive load, power MOSFET's gate capacitance seen driver output varies with voltage level during switching. MOSFET's capacitive load power dissipation calculated using gate charge, value corresponding MOSFET's value (VCC this case) readily obtained from manufacturer's curves. identical MOSFETs 2(VCC)(QG)(fIN) avoid damage power dissipation, LTC4444 includes temperature monitor that will pull junction temperature rises above 160°C. Normal operation will resume when junction temperature cools less than 135°C. Bypassing Grounding LTC4444 requires proper bypassing VBOOST-TS supplies high speed switching (nanoseconds) large currents (Amperes). Careless component placement trace routing cause excessive ringing. obtain optimum performance from LTC4444: Mount bypass capacitors close possible between pins BOOST pins. leads should shortened much possible reduce lead inductance. inductance, impedance ground plane reduce ground drop stray capacitance. Remember that LTC4444 switches greater than peak currents significant ground drop will degrade signal integrity.
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LTC4444 APPLICATIONS INFORMATION
Plan power/ground routing carefully. Know where large load switching current coming from going Maintain separate ground return paths input output power stage. Keep copper trace between driver output load short wide. sure solder Exposed back side LTC4444 package board. Correctly soldered 2500mm2 doublesided copper board, LTC4444 thermal resistance approximately 40°C/W MS8E package. Failure make good thermal contact between exposed back side copper board will result thermal resistances greater than 40°C/W.
TYPICAL APPLICATION
LTC3780 High Efficiency 36V-72V 48V/6A Buck-Boost DC/DC Converter
VBIAS 68pF SENSE- 0.1F 100V VOS+ 487k 8.25k 220k PGOOD SENSE+ SENSE- VOSENSE SGND PLLFLTR PLLIN STBYMD 0.1F 2.2F, 100V, C4532X7R2A225MT SANYO 100ME100HC SANYO 63ME220HC SEMI MMDL770T1G DIODES INC. 1N5819HW-7-F BOOST1 0.1F SENSE+ 0.025 0.025
4444 TA02a
0.022F 1000pF 220k 100pF SENSE+
VBIAS
2.2F 100V 100F 100V
LTC3780EG EXTVCC INTVCC PGND BOOST2
BOOST LTC4444 BINP TINP
0.22F
0.1F
VOS+
47pF
2.2F 100V
VOUT C2,C3 220F
DIODES INC. PDS560-13 DIODES INC. MMBZ5230B-7-F DIODES INC. B1100-13-F SUMIDA CDEP147NP-100MC-125 VISHAY DALE WSL2512R0250FEA
SENSE-
Efficiency
EFFICIENCY
LOAD CURRENT
4444 TA02b
4444f
LTC4444 PACKAGE MS8E Package 8-Lead Plastic MSOP, Exposed
(Reference 05-08-1662
BOTTOM VIEW EXPOSED OPTION 2.06 0.102 (.081 .004) 1.83 0.102 (.072 .004)
2.794 0.102 (.110 .004)
0.889 0.127 (.035 .005)
5.23 (.206)
2.083 0.102 3.20 3.45 (.082 .004) (.126 .136) 3.00 0.102 (.118 .004) (NOTE
0.42 0.038 (.0165 .0015)
0.65 (.0256)
0.52 (.0205)
RECOMMENDED SOLDER LAYOUT
DETAIL 4.90 0.152 (.193 .006) 3.00 0.102 (.118 .004) (NOTE
0.254 (.010) GAUGE PLANE
0.53 0.152 (.021 .006) DETAIL 0.18 (.007) SEATING PLANE 0.22 0.38 (.009 .015) 1.10 (.043)
0.86 (.034)
NOTE: DIMENSIONS MILLIMETER/(INCH) DRAWING SCALE DIMENSION DOES INCLUDE MOLD FLASH, PROTRUSIONS GATE BURRS. MOLD FLASH, PROTRUSIONS GATE BURRS SHALL EXCEED 0.152mm (.006") SIDE DIMENSION DOES INCLUDE INTERLEAD FLASH PROTRUSIONS. INTERLEAD FLASH PROTRUSIONS SHALL EXCEED 0.152mm (.006") SIDE LEAD COPLANARITY (BOTTOM LEADS AFTER FORMING) SHALL 0.102mm (.004")
0.65 (.0256)
0.1016 0.0508 (.004 .002)
MSOP (MS8E) 0307
4444f
Information furnished Linear Technology Corporation believed accurate reliable. However, responsibility assumed use. Linear Technology Corporation makes representation that interconnection circuits described herein will infringe existing patent rights.
LTC4444 TYPICAL APPLICATION
LTC3780 High Efficiency 8V-80V 12V/5A Buck-Boost DC/DC Converter
VBIAS 0.1F 0.01F SENSE- SENSE+ 68pF 0.1F VOS+ 113k 8.06k 150k 0.1F SENSE+ 0.005
4444 TA03
0.22F
VBIAS
2.2F 100V 100F 100V
PGOOD SENSE+ SENSE- VOSENSE SGND PLLFLTR PLLIN STBYMD 0.1F
BOOST1
0.1F
LTC3780EG EXTVCC INTVCC PGND BOOST2
100pF
BOOST LTC4444 BINP TINP
0.22F
VOS+
47pF
VOUT 330F
2.2F, 100V, C4532X7R2A225MT 100F, 100V SANYO 100ME 100AX SANYO 16ME330WF DIODES INC. BAV19WS DIODES INC. 1N5819HW-7-F DIODES INC. B320A-13-F DIODES INC. MMBZ5230B-7-F DIODES INC. B1100-13-F SUMIDA CDEP147-8R0
SENSE-
RELATED PARTS
PART NUMBER LTC1693 Family 1952/LTC3900 LT3010/LT3010-5 LTC3703 LTC3722-1/ LTC3722-2 LTC3723-1/ LTC3723-2 LTC3780 LTC3785 LTC3810 LTC3813 LT3845 LTC3901 LTC4440/ LTC4440-5 LTC4441
DESCRIPTION High Speed Dual MOSFET Drivers Input Isolated DC/DC Converter Chip Sets
COMMENTS 1.5A Peak Output Current, 4.5V 13.2V Synchronous Rectification; Overcurrent, Overvoltage, UVLO Protection; Power Good Output Signal; Compact Solution RSENSETM, Synchronizable Voltage Mode Control Adaptive Zero Voltage Switching, High Output Power Levels Kilowatts) Current Mode Voltage Mode Push-Pull Controllers Four Switch, 36V, 0.8V VOUT 30V, High Efficiency High Efficiency, Four Switch, 2.7V 10V, 2.7V VOUT
50mA, Dropout Micropower Regulators Quiescent Current (30A), Stable with Small (1F) Ceramic Capacitor 100V Synchronous Switching Regulator Controller Synchronous Dual Mode Phase Modulated Full-Bridge Controllers Synchronous Push-Pull Controllers High Power Buck-Boost Controller Buck-Boost Controller
100V Current Mode Synchronous Step-Down Switching RSENSE, Synchronizable Tracking, Power Good Signal Regulator Controller 100V Current Mode Synchronous Step-Up Controller High Power Synchronous DC/DC Controller Secondary Side Synchronous Driver Push-Pull Full-Bridge Converters High Speed, High Voltage, High Side Gate Drivers MOSFET Driver RSENSE, On-Board Gate Drivers, Synchronizable Current Mode Control, 60V, Programmable Time Out, Reverse Inductor Current Sense Wide Operating Range: 100V Transient Adjustable Gate Drive from Peak Output Current, 9.5V Gate Drive Supply, Input Supply
4444f
LTC4442/LTC4442-1 High Speed Synchronous N-Channel MOSFET Drivers RSENSE trademark Linear Technology Corporation.
Linear Technology Corporation
(408) 432-1900 FAX: (408) 434-0507
1107 PRINTED
1630 McCarthy Blvd., Milpitas, 95035-7417
www.linear.com
LINEAR TECHNOLOGY CORPORATION 2007

LTC4444 high frequency high voltage gate driver that drives N-channel

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