Generation Technology Ultra On-Resistance Dual P-Channel MOSFET Very S
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HEXFET Power MOSFET KRF7506
Generation Technology Ultra On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Profile 1.1mm) Available Tape Reel Fast Switching
Absolute Maximum Ratings
Parameter Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range Maximum Junction-to-Ambient dv/dt TSTG
Symbol @TA=
Rating -1.7 -1.4 -9.6 1.25
Unit
V/ns
Repetitive rating; pulse width limited max. junction temperature. Surface mounted FR-4 board, -1.2A, di/dt -140A/ 10sec V(BR)DSS,TJ
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KRF7506
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Pulse width duty cycle Body Diode) td(on) td(off) Ciss Coss Crss -1.2A, 0V*1 =-1.2A di/dt -100A/ Symbol V(BR)DSS
V(BR)DSS/
Testconditons -250 -1mA,Reference -10V, -1.2A*1 -4.5V, -0.60A*1
Unit
-0.039 0.27 0.45 -1.0 0.92 -1.0 -100 -1.25
RDS(on) VGS(th) IDSS
VGS, -250 -10V, -0.60A*1 -24V, -24V,
IGSS
-20V -1.2A -24V -10V -15V -1.2A -25V 1.0MHz
Body Diode) -9.6 -1.2
Repetitive rating; pulse width limited max. junction temperature.
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