Generation Technology Ultra On-Resistance Dual P-Channel MOSFET Very S

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Generation Technology Ultra On-Resistance Dual P-Channel MOSFET Very S

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HEXFET Power MOSFET KRF7504
Generation Technology Ultra On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Profile (<1.1mm) Available Tape Reel Fast Switching
Absolute Maximum Ratings
Parameter Continuous Drain Current, -4.5V Continuous Drain Current, -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range Maximum Junction-to-Ambient dv/dt TSTG
Symbol @TA=
Rating -1.7 -1.4 -9.6 1.25 -5.0
Unit
V/ns
Repetitive rating; pulse width limited max. junction temperature. Surface mounted FR-4 board, -1.2A, di/dt 100A/ 10sec V(BR)DSS,TJ
www.kexin.com.cn
KRF7504
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Pulse width duty cycle Body Diode) td(on) td(off) Ciss Coss Crss -1.2A, 0V*1 =-1.2A di/dt 100A/ Symbol V(BR)DSS
V(BR)DSS/
Testconditons -250 -1mA,Reference -4.5V, -1.2A*1 -2.7V, -0.60A*1
Unit
-0.012 0.27 0.40 -0.7 -1.0 -100 0.96 -1.25
RDS(on) VGS(th) IDSS
VGS, -250 -10V, -0.60A*1 -16V, -16V,
IGSS
-12V -1.2A -16V -4.5V -10V -1.2A -15V 1.0MHz
Body Diode) -9.6 -1.2
Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited max. junction temperature.
www.kexin.com.cn

Generation Technology Ultra On-Resistance Dual P-Channel MOSFET Very S

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