P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23

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P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23

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Transistors
P-Channel Enhancement Mode Field Effect Transistor KO3401
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Features
-30V -4.2 (VGS 10V)
+0.1 2.4-0.1
Unit:
RDS(ON) RDS(ON) RDS(ON)
120m
(VGS -10V) (VGS -4.5V) (VGS -2.5V)
+0.1 1.3-0.1
+0.1 0.95-0.1 +0.1 1.9-0.1
0.55
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base Gate 2.Emitter Source
+0.1 0.38-0.1
0-0.1
Drain 3.collector
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 TSTG
Symbol
Rating -4.2 -3.5
Unit
Pulsed Drain Current Power Dissipation TA=25 TA=70 Junction Storage Temperature Range
*1The value measured with device mounted FR-4 board with 2oz. Copper, still environment with Repetitive rating, pulse width limited junction temperature.
Thermal Characteristics
Parameter Maximum Junction-to-Ambient*1 Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol Unit
Steady-State Steady-State
*1The value measured with device mounted FR-4 board with 2oz. Copper, still environment with thermal impedence from junction lead lead ambient.
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KO3401
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Symbol BVDSS IDSS IGSS VGS(th) ID(ON) Testconditons ID=250 VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V ,TJ=55 VDS=0V, VGS= VDS=VGS ID=-250 VGS=-4.5V, VDS=-5V VGS=-10V, ID=4.2A Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=4.2A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Pulsed Body-Diode Current Reverse Transfer Capacitance Gate resistance Input Capacitance Output Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Turn-On DelayTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Ciss Coss Crss tD(on) tD(off) IF=-4A, dI/dt=100A/ IF=-4A, dI/dt=100A/ VGS=-10V, VDS=-15V, RL=3.6 ,RGEN=6 VGS=-4.5V, VDS=-15V, ID=-4A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz VDS=-5V, ID=-5A IS=-1A,VGS=0V TJ=125
Transistors
Unit
-0.7 -0.75 -2.2 38.2 20.2 11.2 -1.3
Repetitive rating, pulse width limited junction temperature.
Marking
Marking
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P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23

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