(VGS 10V) +0.1 2.4-0.1 MOSFET SOT-23 +0.1 2.9-0.1
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N-Channel Enhancement Mode Field Effect Transistor KO3400(AO3400)
(VGS 10V)
+0.1 2.4-0.1
MOSFET
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit:
RDS(ON) RDS(ON) RDS(ON)
(VGS 10V) (VGS 4.5V) (VGS 2.5V)
+0.1 1.3-0.1
+0.1 0.95-0.1 +0.1 1.9-0.1
0.55
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base Gate 2.Emitter Source
+0.1 0.38-0.1
0-0.1
Drain 3.collector
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Storage Temperature Range RthJA Rthc TSTG Symbol Rating Unit
Repetitive rating, pulse width limited junction temperature.
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KO3400(AO3400)
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) ID=250 Testconditons VGS=0V
MOSFET
Unit
VDS=24V, VGS=0V VDS=24V, VGS=0V ,TJ=55 VDS=0V, VGS= VDS=VGS ID=250 VGS=10V, ID=5.8A 22.8 TJ=125 27.3 43.3 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=5.8A VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 26.3 IF=5A, dI/dt=100A/ IF=5A, dI/dt=100A/
1050
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=5.8A VGS=4.5V, ID=5A VGS=2.5V, ID=4A
state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Pulsed Body-Diode Current Diode Forward Voltage
ID(ON) Ciss Coss Crss tD(on) tD(off)
VGS=4.5V, VDS=5V VDS=5V, ID=5A
IS=1A,VGS=0V
0.71
Repetitive rating, pulse width limited junction temperature.
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