RDS(ON) RDS(ON) gate charge(26nC typical) High performance trench tech

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RDS(ON) RDS(ON) gate charge(26nC typical) High performance trench tech

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P-Channel 2.5V Specified PowerTrench MOSFET KDS6375
RDS(ON) RDS(ON) gate charge(26nC typical) High performance trench technology extremely RDS(ON) High power current handling capability -4.5 =-2.5V
Absolute Maximum Ratings
Parameter Drain Source Voltage Gate Source Voltage Drain Current Continuous (Note Drain Current Pulsed Power Dissipation Single Operation (Note Power Dissipation Single Operation (Note Power Dissipation Single Operation (Note Operating Storage Temperature Thermal Resistance Junction Ambient (Note Thermal Resistance Junction Ambient (Note Thermal Resistance Junction Case (Note TSTG
Symbol VDSS
Rating
Unit
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KDS6375
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage(Not Gate Threshold Voltage Temperature Coefficient(Not IDSS IGSSF IGSSR VGS(th) Symbol BVDSS Testconditons -250 -250 -100 -0.4 -0.7 2694 A,VGS -4.5 RGEN (Note A,VGS=-4.5V(Note -2.1 -2.1A (Not -0.7 -1.2 -1.5
Unit
Referenced
VGS, -250 -250
Referenced
-4.5 Static Drain-Source On-Resistance(Not RDS(on) -2.5 -4.5 A,TJ On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage ID(on) Ciss Coss Crss td(on) td(off) -4.5
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RDS(ON) RDS(ON) gate charge(26nC typical) High performance trench tech

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