SOT-23 MOSFET Unit: Features +0.1 2.4-0.1 +0.
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N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414)
SOT-23
MOSFET
Unit:
Features
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
+0.1 0.95-0.1 +0.1 1.9-0.1
RDS(ON) RDS(ON)
(VGS 2.5V) (VGS 1.8V)
0.55
RDS(ON)
(VGS 4.5V)
+0.1 1.3-0.1
4.2A (VGS=4.5V)
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base Gate 2.Emitter Source
+0.1 0.38-0.1
0-0.1
Drain 3.collector
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 RthJA RthJC TSTG Symbol Rating Unit
Pulsed Drain Current Power Dissipation TA=25 TA=70 Themal Resistance.Junction-to-Ambient Themal Resistance.Junction-to-Case Junction Storage Temperature Range
*1The value measured with device mounted FR-4 board with 2oz. Copper, still environment with
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KO3414(AO3414)
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons VGS=0V VDS=16V, VGS=0V VDS=16V, VGS=0V ,TJ=55 VDS=0V, VGS=
MOSFET
Unit
TJ=125
VDS=VGS VGS=4.5V, ID=4.2A
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=4.2A VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A
state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off FallTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage
ID(ON) Ciss Coss Crss tD(on) tD(off)
VGS=4.5V, VDS=5V VDS=5V, ID=4.2A
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS= =10V, ID=4.2A
VGS=4.5V, VDS=10V,
12.7
IF=4A, dI/dt=100A/ IF=4A, dI/dt=100A/
12.3
IS=1A,VGS=0V
0.76
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