SOT-23 MOSFET Unit: +0.1 2.4-0.1 -2.6 (VGS -10V) R
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P-Channel Enhancement Mode Field Effect Transistor KO3409(AO3409)
SOT-23
MOSFET
Unit:
+0.1 2.4-0.1
-2.6 (VGS -10V) RDS(ON) 130m RDS(ON) 200m (VGS -10V) (VGS -4.5V)
+0.1 1.3-0.1
-30V
+0.1 0.95-0.1 +0.1 1.9-0.1
0.55
Features
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base Gate 2.Emitter Source
+0.1 0.38-0.1
0-0.1
Drain 3.collector
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Themal Resistance. Junction-to-Ambient Themal Resistance. Junction-to-Case Junction Storage Temperature Range RthJA RthJC TSTG Symbol Rating -2.6 -2.2 Unit
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KO3409(AO3409)
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=250 VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V ,TJ=55 VDS=0V, VGS= VDS=VGS ID=-250 VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance rDS(ON) VGS=-10V, ID=-2.6A VGS=-4.5V, ID=-2A state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage tD(on) tD(off) IS=-1A,VGS=0V IF=-2.6A, dI/dt=100A/ IF=-2.6A, dI/dt=100A/ VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3 ID(ON) Ciss Coss Crss VGS=-4.5V, VDS=-15V, ID=-2.6A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz VGS=-4.5V, VDS=-5V VDS=-5V, ID=-5A TJ=125
MOSFET
Unit
-1.9 50.3 37.8 0.95 16.8 -0.82
Repetitive rating, pulse width limited junction temperature.
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