saturation voltage, typically VCE(sat) 0.12V 500mA 50mA. PC=2W ceramic
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Medium Power Transistor 2SC5053
saturation voltage, typically VCE(sat) 0.12V 500mA 50mA. PC=2W ceramic board).
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Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO (Pulse) Junction temperature Storage temperature Single pulse, Pw=100ms, duty=1/2. 40X40X0.7mm Ceramic board. Tstg
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Unit
Collector power dissipation
Electrical Characteristics
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-1mA VCB=-40V VEB=-4V Testconditons -0.1 -0.5 -0.4 Unit
VCE(sat) IC=-500mA,IB=-50mA VCE=-3V,IC=-0.5A VCE=-5V, 50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz
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