Triple Diffused Planar Silicon Transistor 2SC4602 -00.1 TO-2
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Triple Diffused Planar Silicon Transistor 2SC4602
-00.1
TO-263
+0.1 1.27-0.1 +0.2 4.57-0.2
Unit:
Surface mount type device making following possible. Reduction number manufacturing processes 2SC4602-applied equipment.
High breakdown voltage, high reliability.
-00.2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
Fast switching speed. Wide ASO. Adoption MBIT process.
2.54 5.08
+0.1 -0.1
-00.2
-00.2
Small size 2SC4602-applied equipment.
-00.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature range 300ms, duty cycle Tstg Symbol VCBO VCEO VEBO Rating 1100 1.65 +150 Unit
High density surface mount applications.
1,Base 2,Collector 3,Emitter
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2SC4602
Electrical Characteristics
Parameter Collector cut-off current Emitter cut-off current current gain Gain-Bandwidth product Output Capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON time Storage time Fall time Symbol ICBO IEBO (sat) (sat) (BR) (BR) V(BR)EBO VCEO(SUS) tstg IC=2A,IB1=0.4A,IB2=-0.8A,RL=200 Testconditons 0.2A =0.2A VCB=10V,f=1MHz 0.3A =1.5 mA,RBE= IE=1mA,IC=0 IC=1.5A,IB1=-IB2=0.3A,L=2mH 1100
Unit
Switching Time Test Circuit
Classification
Rank
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