SOT-23 Transistors Unit: Features +0.1 2.9-0.1 +0.
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Silicon Transistor 2SA1981SF
SOT-23
Transistors
Unit:
Features
+0.1 2.9-0.1 +0.1 0.4-0.1
High Hfe:.hFE=100
+0.1 2.4-0.1 +0.1 1.3-0.1
+0.1 0.95-0.1 +0.1 1.9-0.1
0.55
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg Rating -800 +150 Unit
Electrical Characteristics
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO
Testconditons IE=0
+0.1 0.38-0.1
0-0.1
Unit
IC=-1mA IB=0 IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA
-0.1 -0.1 -0.5
VCE(sat) IC/IB=-500mA/-20mA VCE=-5V, IE=10mA, VCB=-10V, IE=0, f=1MHz
Classification
Marking Rank
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