N-Channel MOSFET Transistor STP75NF75 FEATURES Current -ID=
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N-Channel MOSFET Transistor
STP75NF75
FEATURES Current -ID= 80A@ TC=25 Source Voltage: VDSS= 75V(Min) Drain-Source On-Resistance RDS(on) 0.011(Max) DESCRIPTION Suitable primary switch advanced high-efficiency, highfrequency isolated DC-DC converters Telecom Computer applications. also intended application with gate drive requirements APPLICATIONS relay drivers motor control converters environment ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VDSS Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp10s) Total Dissipation @TC=25 Max. Operating Junction Temperature Storage Temperature VALUE -55~175 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient 62.5 UNIT
Websitewww.iscsemi.cn
N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
STP75NF75
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; 0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V;
0.011
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= VDS= 75V; VGS= VDS= 75V; VGS= 80A; VGS=0
±100
IDSS
Zero Gate Voltage Drain Current
Forward On-Voltage
Websitewww.iscsemi.cn
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