N-Channel MOSFET Transistor MTP50N06V FEATURES Current -ID=4
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N-Channel MOSFET Transistor
MTP50N06V
FEATURES Current -ID=42A@ TC=25 Source Voltage: VDSS= 60V(Min) Drain-Source On-Resistance RDS(on) 0.028(Max)
DESCRIPTION voltage, high speed switching applications power supplies, converters power motor controls, these devices particularly well suited bridge circuits where diode speed commutating safe operating areas critical offer additional safety margin against unexpected voltage transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VDSS Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp10s) Total Dissipation @TC=25 Max. Operating Junction Temperature Storage Temperature VALUE -55~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient 62.5 UNIT
Websitewww.iscsemi.cn
N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
MTP50N06V
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; 0.25mA
RDS(on) IGSS
Drain-Source On-Resistance
VGS= 10V; VGS= ±20V;VDS= VDS= 60V; VGS=0 VDS= 60V; VGS=0; 42A; VGS=0
0.028 ±100
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Forward On-Voltage
Websitewww.iscsemi.cn
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