Silicon Darlingtion Power Transistor MJ2501 DESCRIPTION Base
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Silicon Darlingtion Power Transistor
MJ2501
DESCRIPTION Base-Emitter Shunt Resistors current gainhFE 1000 (Min) Breakdown VoltageV(BR)CEO= -80V(Min) type MJ3001 APPLICATIONS output devices complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
VALUE -0.2 -55~200
UNIT
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance, Junction Case 1.17 UNIT
Websitewww.iscsemi.cn
Silicon Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
MJ2501
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-100mA;
VCE(sat)-1
Collector-Emitter Saturation Voltage
-5A; -20mA
-2.0
VCE(sat)-2
Collector-Emitter Saturation Voltage
-10A; -50mA
-4.0
VBE(on) ICEO
Base-Emitter voltage
VCE=
-3.0
Collector Cutoff current
VCE= -40V;
-1.0 -1.0 -5.0 -2.0
ICER
Collector Cutoff current
VCE= -80V; RBE= 1.0k VCE= -80V; RBE= 1.0k, TC=150 VEB= -5V;
IEBO
Emitter Cut-off current
Current Gain
VCE=
1000
Websitewww.iscsemi.cn
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