Silicon Darligton Power Transistors DESCRIPTION With TO-126 packa
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Silicon Darligton Power Transistors
DESCRIPTION With TO-126 package Complement type BD676/678/680 DARLINGTON High current gain APPLICATIONS output devices complementary general-purpose amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
BD675/BD677/BD679
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
BD675 BD677
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
BD679 BD675 BD677
Open emitter Open base
VALUE
UNIT
BD679 Open collector
VEBO Tstg
Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature
TC=25
-55~150
THERMAL CHARACTERISTICS
SYMBOL j-mb PARAMETER Thermal resistance from junction ambient Thermal resistance from junction mounting base VALUE 3.12 UNIT
Silicon Darligton Power Transistors
BD675/BD677/BD679
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER BD675 V(BR)CEO Collector-emitter breakdown voltage BD677 BD679 BD675 V(BR)CBO Collector-base breakdown voltage BD677 BD679 V(BR)EBO VCEsat VBE(on) ICBO ICEO IEBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain IE=5mA; IC=0 IC=1.5A; IB=30mA IC=1.5A VCE=3V IC=1mA; IE=0 IC=100mA; IB=0 CONDITIONS TYP. UNIT
VEB=5V; IC=0
VCB=rated BVCBO; IE=0 Ta=100
VCE=1/2rated BVCEO; IB=0
IC=1.5A VCE=3V
Silicon Darligton Power Transistors
PACKAGE OUTLINE
BD675/BD677/BD679
Fig.2 Outline dimensions
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