Silicon Dalington Power Transistors DESCRIPTION With TO-220C pack

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Silicon Dalington Power Transistors DESCRIPTION With TO-220C pack

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Silicon Dalington Power Transistors
DESCRIPTION With TO-220C package Complement type BD644 DARLINGTON APPLICATIONS output stages audio equipment ,general amplifier,and analogue switching applications
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BD643
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg
Collector-base voltage
PARAMETER
Collector-emitter voltage
INCH
Base current
Emitter-base voltage
Collector current-DC
TC=25
Open emitter
Open base
CONDITIONS
VALUE 62.5 -55~150
UNIT
Open collector
Collector current-Pulse
Collector power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Dalington Power Transistors
BD643
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current CONDITIONS IC=0.1A, IB=0 IC=5mA, IE=0 IE=2mA, IC=0 IC=3A ,IB=12mA IC=3A VCE=3V VCB=VCBMax; IE=02 VCE=1/2 VCEMax; IB=0 VEB=5V; IC=0 IC=0.5A VCE=3V TYP. UNIT
Emitter cut-off current current gain current gain current gain
Diode forward voltage Transition frequency
INCH
IF=3A
IC=3A VCE=3V IC=6A VCE=3V
1500
IC=3A;VCE=3V;f=1MHz
Silicon Dalington Power Transistors
PACKAGE OUTLINE
BD643
Fig.2 Outline dimensions

Silicon Dalington Power Transistors DESCRIPTION With TO-220C pack

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