Silicon Power Transistors BD434/436/438 DESCRIPTION With TO-
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Silicon Power Transistors
BD434/436/438
DESCRIPTION With TO-126 package Complement type BD433/435/437 APPLICATIONS medium power linear switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
BD434 BD436
VCBO
Collector-base voltage
VCEO
Emitter -base voltage Collector current (DC)
Collector-emitter voltage
BD438 BD434 BD436 BD438
Open emitter
EMIC
VALUE
UNIT
Open base
VEBO Tstg
Open collector
Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25
-65~150
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER Collector-emitter saturation voltage BD434/436 IC=-2A; IB=-0.2A BD438 BD434/436 Base-emitter voltage BD438 BD434 VCEO(SUS) Collector-emitter sustaining voltage BD436 BD438 BD434 ICES Collector cut-off current BD436 BD438 VCB=-22V; IE=0 VCB=-32V; IE=0 VCB=-45V; IE=0 VCE=-22V; VBE=0 VCE=-32V; VBE=0 VCE=-45V; VBE=0 VEB=-5V; IC=0 IC=-0.1A; IB=0 IC=-2A VCE=-1V CONDITIONS
BD434/436/438
TYP.
-0.5
UNIT
VCEsat
-0.2 -0.6 -1.1
-1.2
-100
ICES
Collector cut-off current
BD434 BD436 BD438
IEBO
Emitter cut-off current
hFE-1
current gain
hFE-2
current gain
BD434/436
BD438
IC=-10mA VCE=-5V IC=-2A VCE=-1V
EMIC
-100
IC=-0.5A VCE=-1V
BD434/436 hFE-3 current gain BD438 Transition frequency IC=-250mA; VCE=-1V
Silicon Power Transistors
PACKAGE OUTLINE
BD434/436/438
Fig.2 Outline dimensions
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