Silicon Power Transistors DESCRIPTION With TO-126 package Complem
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Silicon Power Transistors
DESCRIPTION With TO-126 package Complement type BD233/235 /237 APPLICATIONS medium power linear switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
BD234 BD236 BD238
Absolute maximum ratings (Ta=25)
SYMBOL
VCBO
PARAMETER
CONDITIONS
BD234 BD236 Open emitter
Collector-base voltage
VCEO
Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature
BD238 BD234 BD236 BD238 Open base
VALUE -100
UNIT
VEBO Tstg
Open collector
TC=25
-65~150
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
BD234 BD236 BD238
TYP.
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.6
Base-emitter voltage
IC=-1A VCE=-2V
-1.3
BD234 Collector-emitter sustaining voltage
VCEO(SUS)
BD236
IC=-0.1A; IB=0
BD238
BD234
VCB=-45V; IE=0
ICBO
Collector cut-off current
IEBO hFE-1 hFE-2
BD236
VCB=-60V; IE=0
-100
BD238
VCB=-100V; IE=0
Emitter cut-off current
current gain
current gain
VEB=-5V; IC=0
IC=-150mA VCE=-2V
IC=-1A VCE=-2V
Transition frequency
IC=-250mA; VCE=-10V
Silicon Power Transistors
PACKAGE OUTLINE
BD234 BD236 BD238
Fig.2 Outline dimensions
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