Silicon Power Transistors BD176 BD178 BD180 DESCRIPTION With
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Silicon Power Transistors
BD176 BD178 BD180
DESCRIPTION With TO-126 package Complement type BD175 /177 /179 APPLICATIONS medium power linear switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
BD176 BD178
VCBO
Collector-base voltage
VCEO
INCH
BD180
Open emitter Open base
VALUE
UNIT
BD176 BD178
Collector-emitter voltage
BD180 VEBO Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector
-65~150
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEsat PARAMETER Collector-emitter saturation voltage Base-emitter voltage BD176 VCEO(SUS) Collector-emitter sustaining voltage BD178 BD180 BD176 ICBO Collector cut-off current BD178 BD180 VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-150mA VCE=-2V IC=-1A VCE=-2V IC=-0.1A; IB=0 CONDITIONS IC=-1A; IB=-0.1A IC=-1A VCE=-2V
BD176 BD178 BD180
TYP.
-0.8 -1.3
UNIT
-100
IEBO hFE-1 hFE-2
Emitter cut-off current current gain current gain Transition frequency
hFE-1 Classifications 40-100
63-160
IC=-250mA; VCE=-10V
100-250
classification :only BD176
Silicon Power Transistors
PACKAGE OUTLINE
BD176 BD178 BD180
Fig.2 Outline dimensions
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