Silicon Power Transistors DESCRIPTION With TO-126 package High cu
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Silicon Power Transistors
DESCRIPTION With TO-126 package High current Complement type BD136/138/140 APPLICATIONS Driver stages high-fidelity amplifiers television circuits
PINNING Emitter Collector;connected mounting base Base DESCRIPTION
BD135 BD137 BD139
Absolute maximum ratings (Ta=25)
SYMBOL
VCBO
Collector-base voltage
PARAMETER
CONDITIONS
BD135 BD137 Open emitter
BD139
VCEO
VEBO Tstg Tamb
Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature
BD135 BD137
BD139
Open base
EMIC
VALUE
UNIT
Open collector
Tmb70
-65~150 -65~150
Operating ambient temperature
THERMAL CHARACTERISTICS
SYMBOL j-mb PARAMETER Thermal resistance from junction ambient Thermal resistance from junction mounting base VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
BD135 BD137 BD139
TYP.
UNIT
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
Base-emitter voltage
IC=500mA VCE=2V VCB=30V; IE=0
ICBO
Collector cut-off current VCB=30V; IE=0 Tj=125
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
current gain current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16
IC=5mA VCE=2V
hFE-2
hFE-3
current gain
Transition frequency
IC=150mA VCE=2V
IC=500mA VCE=2V IC=50mA; VCE=5V ;f=100MHz
EMIC
Silicon Power Transistors
PACKAGE OUTLINE
BD135 BD137 BD139
Fig.2 Outline dimensions
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