Silicon Darlingtion Power Transistor 2SD803 DESCRIPTION Base
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Silicon Darlingtion Power Transistor
2SD803
DESCRIPTION Base-Emitter Shunt Resistors current gainhFE 2000 (Min) Breakdown VoltageV(BR)CEO= 100V(Min) Area Safe Operation
APPLICATIONS high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current -Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
VALUE -65~150
UNIT
Tstg
Websitewww.iscsemi.cn
Silicon Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SD803
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
50mA
VCE(sat)
Collector-Emitter Saturation Voltage
30mA
ICBO
Collector Cutoff current
VCB= 120V; IE=0
IEBO
Emitter Cut-off current
VEB=
hFE-1
Current Gain
VCE=
2000
hFE-2
Current Gain
VCE=
Websitewww.iscsemi.cn
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