Silicon Darlingtion Power Transistor 2SD692 DESCRIPTION Base
|
|
|
Top Searches for this datasheet
Silicon Darlingtion Power Transistor
2SD692
DESCRIPTION Base-Emitter Shunt Resistors current gainhFE 1000 (Min) Breakdown VoltageV(BR)CEO= 80V(Min) Area Safe Operation
APPLICATIONS high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL VCBO VCER VCEO VEBO
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current -Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
VALUE -65~150
UNIT
Tstg
Websitewww.iscsemi.cn
Silicon Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SD692
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
50mA
VCER
Collector-Emitter Breakdown Voltage
50mA RBE=
VCE(sat)
Collector-Emitter Saturation Voltage
60mA
ICBO
Collector Cutoff current
VCB= 100V; IE=0
IEBO
Emitter Cut-off current
VEB=
Current Gain
VCE=
1000
10000
Classifications 1000-2500 2000-5000 4000-10000
Websitewww.iscsemi.cn
Other recent searches
SPF-5043Z - SPF-5043Z SPF-5043Z Datasheet
SPF-5122Z - SPF-5122Z SPF-5122Z Datasheet
PC457L0NIP - PC457L0NIP PC457L0NIP Datasheet
MRF1090MB - MRF1090MB MRF1090MB Datasheet
DS2431-2 - DS2431-2 DS2431-2 Datasheet
MV95308 - MV95308 MV95308 Datasheet
ARM1156T2-S - ARM1156T2-S ARM1156T2-S Datasheet
ARM966E-S - ARM966E-S ARM966E-S Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
