Silicon Darlington Power Transistor 2SB1556 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1556
DESCRIPTION Breakdown Voltage: V(BR)CEO= -140V(Min) Current Gain: hFE= 5000(Min)@IC= Type 2SD2385
APPLICATIONS power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
-140 -140 -0.1
Base Current-Continuous Collector Power Dissipation TC=25
Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1556
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-50mA
-140
VCE(sat)
Collector-Emitter Saturation Voltage
-7A; -7mA
-2.5
VBE(on)
Base-Emitter Voltage
VCE=
-3.0
ICBO
Collector Cutoff Current
VCB= -140V IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
Current Gain
VCE=
hFE-2
Current Gain
Output Capacitance
Current-Gain-Bandwidth Product
hFE-1 Classifications 5000-12000
-12A VCE=
IE=0 VCB= -10V;ftest= 1.0MHz
5000 2000
30000
IC=-1A VCE=
9000-18000
15000-30000
Websitewww.iscsemi.cn
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