Silicon Power Transistors 2SA1673 DESCRIPTION TO-3PML packag
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Silicon Power Transistors
2SA1673
DESCRIPTION TO-3PML package type 2SC4388 APPLICATIONS general purpose
PINNING DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-3PML) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -180 -180 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5
2SA1673
-180
TYP.
UNIT
-2.0
VCB=-180V; IE=0 VEB=-6V; IC=0 IC=-3A VCE=-4V IC=-0.5A VCE=-12V IE=0; VCB=-10V;f=1MHz
Switching times Turn-on time Storage time Fall time IC=-10A;RL=4 IB1=-IB2=-1A VCC=-40V 0.60 0.90 0.20
classifications 50-100 70-140 90-180
Silicon Power Transistors
PACKAGE OUTLINE
2SA1673
Fig.2 Outline dimensions
Silicon Power Transistors
2SA1673
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