Silicon Power Transistors 2SA1671 DESCRIPTION TO-3PML packag
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Silicon Power Transistors
2SA1671
DESCRIPTION TO-3PML package type 2SC4386 APPLICATIONS general purpose
PINNING Base Collector Emitter Fig.1 simplified outline (TO-3PML) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -120 -120 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1671
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
-120
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-1mA; IC=0 IC=-3 A;IB=-0.3
Collector-emitter saturation voltage
-0.5
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
current gain
IC=-3A VCE=-4V
Transition frequency
IC=-0.5A VCE=-12V
classifications 50-100 70-140 90-180
Silicon Power Transistors
PACKAGE OUTLINE
2SA1671
Fig.2 Outline dimensions
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