Silicon Power Transistors 2SA1658 DESCRIPTION TO-220F packag
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Silicon Power Transistors
2SA1658
DESCRIPTION TO-220F package type 2SC4369 linearity APPLICATIONS general purpose applications
PINNING Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -0.3 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1658
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-0.3
-0.8
Base-emitter voltage
IC=-0.5A VCE=-2V
-0.75
-1.0
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1.0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
hFE-1
current gain
IC=-0.5A VCE=-2V
hFE-2
current gain
IC=-2.5A VCE=-2V
Output capacitance
IE=0 VCB=-10V;f=1MHz
Transition frequency
IC=-0.5A VCE=-2V
hFE-1 Classifications 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1658
Fig.2 Outline dimensions
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