Silicon Power Transistors 2SA1645 DESCRIPTION TO-220 package

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Silicon Power Transistors 2SA1645 DESCRIPTION TO-220 package

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Silicon Power Transistors
2SA1645
DESCRIPTION TO-220 package switching speed collector saturation voltage APPLICATIONS switching power supplies,DC-DC converters,motor drivers,solenoid drivers, other low-voltage power supply devices, well high current switching
PINNING Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25
CONDITIONS Open emitter Open base Open collector
VALUE -150 -100
UNIT
PW300s, duty cycle10%
-3.5
Total power dissipation TC=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEsat-1 VCEsat ICBO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain current gain Transition frequency Collector capacitance CONDITIONS IC=-4A; IB=-0.2A IC=-6A; IB=-0.3A IC=-4A; IB=-0.2A IC=-6A; IB=-0.3A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.5A VCE=-2V IC=-1.5A VCE=-2V IC=-4A VCE=-2V IC=-1.5A VCE=-10V IE=-0 VCB=-10V;f=1MHz TYP.
2SA1645
-0.3 -0.5 -1.2 -1.5
UNIT
Switching times Turn-on time Storage time Fall time IC=-4A; IB1=-IB2=-0.2A RL=12.5; VCC=-50V
hFE-2 Classifications 100-200 150-300 200-400
Silicon Power Transistors
PACKAGE OUTLINE
2SA1645
Fig.2 Outline dimensions(unindicated tolerance:±0.10

Silicon Power Transistors 2SA1645 DESCRIPTION TO-220 package

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