Silicon Power Transistors 2SA1644 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1644
DESCRIPTION TO-220 package switching speed collector saturation voltage APPLICATIONS switching power supplies,DC-DC converters,motor drivers,solenoid drivers, other low-voltage power supply devices, well high current switching
PINNING Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25
CONDITIONS Open emitter Open base Open collector
VALUE -150 -100
UNIT
PW300s, duty cycle10%
Total power dissipation TC=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SA1644
UNIT
VCEsat-1
Collector-emitter saturation voltage
IC=-3A; IB=-0.15A
-0.3
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.2A IC=-3A; IB=-0.15A
-0.5
Base-emitter saturation voltage
-1.2
Base-emitter saturation voltage
IC=-4A; IB=-0.2A
-1.5
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
current gain
IC=-0.2A VCE=-2V
hFE-2 hFE-3
current gain
IC=-1A VCE=-2V IC=-3A VCE=-2V
current gain
hFE-2 Classifications 100-200 150-300 200-400
Silicon Power Transistors
PACKAGE OUTLINE
2SA1644
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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