Silicon Power Transistors 2SA1640 DESCRIPTION TO-220F packag
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Silicon Power Transistors
2SA1640
DESCRIPTION TO-220F package collector saturation voltage linearity APPLICATIONS switching regulator ,driver power amplifier applications
PINNING Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
VALUE -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1640
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA IB=0
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA IE=0
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA IC=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.1A
-0.4
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.1A
-1.0
ICBO
Collector cut-off current
VCB=-30V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
current gain
IC=-0.2A VCE=-2V
Transition frequency
IC=-0.5A VCE=-10V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1640
Fig.2 Outline dimensions
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