Silicon Power Transistors 2SA1634 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1634
DESCRIPTION TO-220 package type 2SC4007 collector saturation voltage APPLICATIONS medium speed,electrical supply DC-DC converter applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SA1634
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.1mA ,IC=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
current gain
IC=-1A VCE=-4V
Output capacitance
IE=0 VCB=-10V;f=1MHz
Transition frequency
IC=-0.5A VCE=-12V
Classifications 60-120 100-200 160-320
Silicon Power Transistors
PACKAGE OUTLINE
2SA1634
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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