Silicon Power Transistors 2SA1633 DESCRIPTION TO-247 package
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Silicon Power Transistors
2SA1633
DESCRIPTION TO-247 package type 2SC4278 current high power capability APPLICATIONS audio output applications
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-247) DESCRIPTION
Absolute maximum ratings(Tc=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -55~150 UNIT
Silicon Power Transistors
2SA1633
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
-150
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.5
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
current gain
IC=-1A VCE=-5V
Transition frequency
IC=-1A VCE=-10V
Classifications 60-120 100-200 160-320
Silicon Power Transistors
PACKAGE OUTLINE
2SA1633
Fig.2 Outline dimensions
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