Silicon Power Transistors 2SA1513 DESCRIPTION TO-3PML packag
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Silicon Power Transistors
2SA1513
DESCRIPTION TO-3PML package current capability collector saturation voltage APPLICATIONS high speed high power switching applications
PINNING Base Collector Emitter Fig.1 simplified outline (TO-3PML) symbol DESCRIPTION
Maximum absolute ratings(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 Collector power dissipation TC=25 Tstg Junction temperature Storage temperature -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1513
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-1mA; IC=0 IC=-12 A;IB=-0.6
Collector-emitter saturation voltage
-0.5
VBEsat
Base-emitter saturation voltage
IC=-12 A;IB=-0.6
-1.5
ICBO
Collector cut-off current
VCB=-60V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
current gain
IC=-3A VCE=-2V
Output capacitance
IE=0 VCB=-10V;f=1MHz IC=-1.5A VCE=-10V
Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
2SA1513
Fig.2 Outline dimensions
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