Silicon Power Transistors 2SA1493 DESCRIPTION MT-200 package

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Silicon Power Transistors 2SA1493 DESCRIPTION MT-200 package

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Silicon Power Transistors
2SA1493
DESCRIPTION MT-200 package type 2SC3857 APPLICATIONS general purpose
PINNING(see Fig.2) Base Collector;connected mounting base Emitter Fig.1 simplified outline (MT-200) symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -200 -200 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-10 A;IB=-1 VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A VCE=-4V IC=-0.5A VCE=-12V IE=0; VCB=-10V;f=1MHz -200
2SA1493
TYP.
UNIT
-3.0 -100 -100
Switching times Turn-on time Storage time Fall time IC=-5A;RL=-12 IB1=-IB2=-0.5A VCC=-60V 0.30 0.90 0.20
classifications 50-100 70-140 90-180
Silicon Power Transistors
PACKAGE OUTLINE
2SA1493
Fig.2 Outline dimensions
Silicon Power Transistors
2SA1493

Silicon Power Transistors 2SA1493 DESCRIPTION MT-200 package

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