Silicon Power Transistors 2SA1491 DESCRIPTION TO-3PN package

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Silicon Power Transistors 2SA1491 DESCRIPTION TO-3PN package

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Silicon Power Transistors
2SA1491
DESCRIPTION TO-3PN package type 2SC3855 APPLICATIONS general purpose
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-3PN) symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -140 -140 -55~150
UNIT
Tstg
Silicon Power Transistors
2SA1491
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-140
VCEsat ICBO
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A VCB=-140V; IE=0
-2.0
Collector cut-off current
-100
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
current gain
IC=-3A VCE=-4V
Transition frequency
IC=0.5A VCE=-12V
Switching times
Turn-on time IC=-5A;RL=12 IB1=- IB2=-0.5A VCC=60V
0.30
Storage time
0.90
Fall time
0.20
Silicon Power Transistors
2SA1491
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Silicon Power Transistors
2SA1491

Silicon Power Transistors 2SA1491 DESCRIPTION TO-3PN package

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