Silicon Power Transistors 2SA1490 DESCRIPTION TO-3PN package
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Silicon Power Transistors
2SA1490
DESCRIPTION TO-3PN package type 2SC3854 APPLICATIONS general purpose
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-3PN) symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -120 -120 -55~150
UNIT
Tstg
Silicon Power Transistors
2SA1490
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-120
VCEsat ICBO
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A VCB=-120V; IE=0
-1.5
Collector cut-off current
-100
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
current gain
IC=-3A VCE=-4V
Transition frequency
IC=0.5A VCE=-12V
Switching times
Turn-on time IC=-4A;RL=10 IB1=-IB2=-0.4A VCC=40V
0.25
Storage time
Fall time
Silicon Power Transistors
PACKAGE OUTLINE
2SA1490
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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