Silicon Power Transistors 2SA1389 DESCRIPTION MT-200 package
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Silicon Power Transistors
2SA1389
DESCRIPTION MT-200 package switching speed safe operating area APPLICATIONS frequency power amplifiers power amplifiers regulators converters
PINNING(see Fig.2) Base Collector;connected mounting base Fig.1 simplified outline (MT-200) symbol Emitter DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=-1mA ;IB=0
2SA1389
-160
TYP.
UNIT
IE=-50A; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-7V; IC=0 IC=-1A VCE=-5V IC=-7A VCE=-5V IC=-1A VCE=-10V
-1.8 -1.7
Silicon Power Transistors
PACKAGE OUTLINE
2SA1389
Fig.2 outline dimensions
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