Silicon Power Transistors 2SA1387 DESCRIPTION TO-220Fa packa
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Silicon Power Transistors
2SA1387
DESCRIPTION TO-220Fa package collector saturation voltage speed switching time current gain
APPLICATIONS
current switching applications
PINNING DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25
CONDITIONS Open emitter Open base Open collector
VALUE
UNIT
Collector power dissipation TC=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
2SA1387
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Trainsition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A ;IB=-0.075A
TYP.
UNIT
-0.15 -0.8
-0.4 -1.2
IC=-3A IB=-0.075A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-1A VCE=-1V IC=-3A VCE=-1V IC=-1A VCE=-4V IE=0; VCE=-10V;f=1MHz
Switching times Turn-on time Storage time Fall time IB1=-IB2=-0.075A VCC-30V;RL=10
Silicon Power Transistors
PACKAGE OUTLINE
2SA1387
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SA1387
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