Silicon Power Transistors 2SA1360 DESCRIPTION TO-126 package
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Silicon Power Transistors
2SA1360
DESCRIPTION TO-126 package type 2SC3423 transition frequency APPLICATIONS frequency amplifier applications
PINNING Emitter Collector;connected mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 Total power dissipation TC=25 Tstg Junction temperature Storage temperature -55+150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1360
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
-150
VCEsat
Collector-emitter saturation voltage
IC=-10mA; IB=-1mA IC=-10mA VCE=-5V
-1.0
Base-emitter voltage
-0.8
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
current gain
IC=-10mA VCE=-5V
Output capacitance
IE=0 VCB=-10V f=1MHz
Transition frequency
IC=-10mA VCE=-10V
Classifications 80-160 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1360
Fig.2 Outline dimensions
Silicon Power Transistors
2SA1360
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