Silicon Power Transistors 2SA1332 DESCRIPTION TO-220Fa packa
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
2SA1332
DESCRIPTION TO-220Fa package VCEO APPLICATIONS amplifier applications stage amplifier applications
PINNING DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -160 -160 -1.5 -0.15 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=10mA IB=0
2SA1332
-160
TYP.
UNIT
IE=1mA IC=0 IC=-0.5A, IB=-50mA IC=-0.1A VCE=-10V VCB=-160V, IE=0 VEB=-5V; IC=0 IC=-0.1A VCE=-10V IC=-0.1A VCE=-10V
-1.5 -1.0 -1.0 -1.0
Silicon Power Transistors
PACKAGE OUTLINE
2SA1332
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Other recent searches
UT699 - UT699 UT699 Datasheet
SYM53C1010-33 - SYM53C1010-33 SYM53C1010-33 Datasheet
SIL720 - SIL720 SIL720 Datasheet
SIL725 - SIL725 SIL725 Datasheet
CSTS0800MG03 - CSTS0800MG03 CSTS0800MG03 Datasheet
3DD13002 - 3DD13002 3DD13002 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
