Silicon Power Transistors 2SA1329 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1329
DESCRIPTION TO-220 package type 2SC3346 collector saturation voltage speed switching time APPLICATIONS current switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=-50mA ,IB=0 IC=-6A; IB=-0.3A IC=-6A; IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A VCE=-1V IC=-6A VCE=-1V IE=0 VCB=-10V;f=1MHz IC=-1A VCE=-5V
2SA1329
TYP.
UNIT
-0.2 -0.9
-0.4 -1.2
Switching times Turn-on time Storage time Fall time IB1=- IB2=-0.3A RL=5;VCC=-30V
hFE-1 Classifications 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1329
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1329
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